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Stress in Copper thin Films With Barrier Layers

Published online by Cambridge University Press:  21 February 2011

Richard P. Vinci  and
John C. Bravman
Richard P. Vinci
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

Wafer curvature and grazing incidence x-ray scattering (GIXS) techniques were used to investigate the biaxial stresses induced in blanket Cu films during a thermal cycle to 460°C and back to room temperature. Cu was deposited by DC sputtering at ambient temperature. Several different barrier layer materials — SiO2, W, Ta, TiN, and Si3N4 — were used to compare any effect barrier choice might have on Cu microstructure evolution and mechanical behavior. Ta and Si3N4 encouraged a strong (111) Cu texture. A W barrier led to an untextured microstructure which underwent large, uneven grain growth during thermal cycling. Several samples were capped with a Ta layer which affected the stress behavior during cooling by inhibiting dislocation motion. An inverse relationship between strength and thickness was also documented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 269
Copyright
Copyright © Materials Research Society 1993

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