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Stress Enhanced Arsenic Diffusion In Titanium Salicided Junctions By Implantation Into C49 TiSi2 and Rapid Thermal Annealing

  • Dong Kyun Sohn (a1), Ji-Soo Park (a1), Jong-Uk Bae (a1), Yun-Jun Hub (a1) and Jin Won Park (a1)...

Abstract

We studied reverse leakage current in n+/p titanium-salicided shallow junctions using C49 Ti-silicide as a diffusion source. After Ti deposition, rapid thermal annealing (RTA) was performed to form the C49 Ti-silicide. Subsequently, arsenic ions were implanted and a 2nd RTA was carried out at 850 °C to form the low resistivity C54 Ti-silicide. In spite of no drive-in process following the 2nd annealing, the implanted As diffused well into Si substrate and the reverse leakage current of the n+/p junctions was reduced to two orders of magnitude lower. Since the high chemical affinity of As to Ti-silicide trapped the dopant in the silicide, it has been known that Ti or Ti-silicide cannot be used as a diffusion source. However, in this work, we found that the C49 Ti-silicide acted as a diffusion source of As ions. The reason of fast diffusivity is attributed to the generation of high tensile stress induced by As implantation.

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Stress Enhanced Arsenic Diffusion In Titanium Salicided Junctions By Implantation Into C49 TiSi2 and Rapid Thermal Annealing

  • Dong Kyun Sohn (a1), Ji-Soo Park (a1), Jong-Uk Bae (a1), Yun-Jun Hub (a1) and Jin Won Park (a1)...

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