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Stress and Stress Relaxation Study of Sputtered PZT Thin Films for Microsystems Applications

Published online by Cambridge University Press:  10 February 2011

E. Defaÿ ,
C. Malhaire ,
C. Dubois  and
D. Barbier
E. Defaÿ
Affiliation:
LPM-UMRC 5511, INSA Lyon, 20 av. Einstein, bât. 502, 69621 Villeurbanne Cedex, France, defay@insa-lyon.fr
C. Malhaire
Affiliation:
LPM-UMRC 5511, INSA Lyon, 20 av. Einstein, bât. 502, 69621 Villeurbanne Cedex, France, defay@insa-lyon.fr
C. Dubois
Affiliation:
LPM-UMRC 5511, INSA Lyon, 20 av. Einstein, bât. 502, 69621 Villeurbanne Cedex, France, defay@insa-lyon.fr
D. Barbier
Affiliation:
LPM-UMRC 5511, INSA Lyon, 20 av. Einstein, bât. 502, 69621 Villeurbanne Cedex, France, defay@insa-lyon.fr
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Abstract

Residual stresses in thin films play an important role in the mechanical behaviour of MEMS. In this paper we present a study of the stress and its relaxation for the PZT films, and associated electrodes, deposited on oxidized silicon substrates. The stresses were calculated from the bending plate method and the Stoney's equation. The radius of curvature were measured by optical profilometry before and after films deposition. The substrates (180 μm Si + 0.66 μm thermal SiO2) were coated with sputtered Ti (20 nm) and Pt (200 nm) used as bottom electrode. The global stress in the Ti/Pt layer was found compressive (−1.29 GPa) after deposition and tensile (465 MPa) after annealing (400°C, 30s, Ar). A 0.55 μm thick PZT layer was RF-magnetron sputtered and crystallized by a RTA (700°, 30s, Air). The as-deposited PZT films exhibited a little tensile stress of 43 MPa. After annealing, a tensile stress value of 363 MPa was found. Finally, we observed that the stress of the whole multilayer showed a decrease as a function of time. In order to explain this phenomenon, depth profile of each component of the PZT layer were obtained by Secondary Ion Mass Spectrometry (SIMS). This time-dependent stress relaxation was then correlated to a lead and oxygen migration across the PZT layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 237
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Malhaire, C., Le Berre, M. and Barbier, D. Material Reasearch Society Proceedings, Vol. 444, p. 137–142 (1997)Google Scholar
[2] Shepard, J.F., Trolier Mc Kinstry, S., Hendrickson, M.A. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics. East Brunswick (NJ): IEEE, p. 161–165 (1996)Google Scholar
[3] Obermeier, E. Material Research Society Symposium Proceedings, vol. 444, p. 39–57 (1997)Google Scholar
[4] Cammarata, R.C., Bilello, J., Lindsay Greer, A. MRS Bulletin, vol. 24, N° 2, p. 34–38 (1999)Google Scholar
[5] Krawietz, R., Pompe, W., Gerbatsch, A. Materials Science Forum, vol. 287–288, p. 211–214 (1998)Google Scholar
[6] Muralt, P., Kholkin, A. M., Kohli, M., Maeder, T., Setter, N. Microelectronic Engineering, vol. 29, p. 67–70 (1995)Google Scholar
[7] Madsen, L.D., Weaver, L., Ljungcrantz, H., Journal of Electronic Materials, vol. 27, N° 5, p. 418–426 (1998)Google Scholar
[8] Schafer, J.D., Nafe, H., Aldinger, F. J. Appl. Phys., vol. 85, N' 12, p. 8023–8031 (1999)Google Scholar
[9] Defaÿ, E., Semmache, B., Leberre, M. and Barbier, D., Sensors and Actuators A, 74, pp. 77–80 (1999)Google Scholar
[10] Defaÿ, E., Leberre, M., Semmache, B., Troccaz, M. and Barbier, D., Materials Science And Engineering, B55, pp. 123–129 (1998)Google Scholar