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Stress Analysis of Strained Superlattices.

  • R. Peleshchak (a1) and H. Khlyap (a2)

Abstract

The latest successful development of smart technologies, in particular, molecular-beam epitaxy technique and pulse-laser deposition method, made it possible to manufacture optoelectronic active elements based on semiconductor materials with sufficient mismatch of the lattice parameters. This problem is of special interest for preparing photosensitive devices with strained superlattices. The paper focuses on the analysis of charge carriers behavior in mechanically strained superlattices based on semiconductor materials from A2B6 and A4B6 (ZnSe, ZnTe and PbS) playing an important role in the optoelectronics design. Computational modeling is settled on the solution of one-dimensional Schroedinger equation.

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2. Tomm, J. W., Griesche, J., Schmidt, H. et al. phys. stat. sol. (a) 114 621 (1988)
3. Ng, Kwok. The Complete Guide to Semiconductor Devices. Wiley & Sons, New York, 2002.
4. Peleshchak, R., Lukiyanets, B., Zegrya, G. Semiconductors (Russia) 34 1223 (2000)
5. Khlyap, H., Peleshchak, R. phys. stat. sol.(c) 0 857 (2002)

Stress Analysis of Strained Superlattices.

  • R. Peleshchak (a1) and H. Khlyap (a2)

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