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Strain-Compensation in InAsP/GaInP Multiple Quantum Wells for 1.3 μm Wavelength

Published online by Cambridge University Press:  15 February 2011

X. B. Mei  and
C.W. Tu
X. B. Mei
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407, U.S.A.
C.W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407, U.S.A.
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Abstract

We show that high-quality strain-compensated InAsxP1−x/GayIn1−yP multiple quantum wells (MQWs) can be grown by gas-source molecular beam epitaxy on InP substrates even though the InAsxP1−x quantum wells have a large lattice mismatch (∼ 1.3%) with respect to InP. Very sharp satellite peaks in double-crystal X-ray diffraction and narrow line width in low-temperature photoluminescence (FWHM of 4 meV at 9 K) are obtained from MQWs of up to 50 periods. Strain compensation allows a wide range of the net strain around the ideally compensated point, where the net strain equals zero, without degrading crystalline quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 291
Copyright
Copyright © Materials Research Society 1995

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References

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