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Strain Relaxation in GaAs on Si by Two Groups of Misfit Dislocations

Published online by Cambridge University Press:  21 February 2011

M. Tamura ,
T. Saitoh  and
T. Yodo
M. Tamura
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
T. Saitoh
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
T. Yodo
Affiliation:
Optoelectronics Technology Research Laboratory 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan
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Abstract

High-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (001) as a function of film thicknesses and observation directions between two orthogonal <110> directions before and after annealing. Two groups of misfit dislocations are characterized by analyzing whether their extra half planes exist in the film and the substrate side. The group I misfit dislocations due to a stress caused by a lattice misfit between GaAs and Si consist of partial and, 60° and 90° complete dislocations in an as-grown state. After annealing partial dislocations almost disappear and 90° perfect dislocations are predominantly observed. The group II misfit dislocations due to a thermal-expansion misfit-induced stress are all of the 60° type complete dislocations, independent of film thickness and annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 437
Copyright
Copyright © Materials Research Society 1996

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References

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