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Strain Relaxation in Epitaxial Heterostructures: Sensitivity of High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  25 February 2011

M. S. Goorsky ,
S. T. Horng ,
S. R. Sriffler  and
C. S. Stanis
M. S. Goorsky
Affiliation:
Dept. of Materials Science and Engineering, UCLA, Los Angeles, CA
S. T. Horng
Affiliation:
Dept. of Materials Science and Engineering, UCLA, Los Angeles, CA
S. R. Sriffler
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY.
C. S. Stanis
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY.
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Abstract

Comparison of high resolution x-ray diffraction and transmission electron microscopy measurements of Si-based heterostructures demonstrates that diffraction is much more sensitive to strain relaxation than previously reported. This study used as-grown and annealed Si1-x Gex structures grown on (001) Si by UHV/CVD. (004), (113), and (115) rocking curves were employed. Using the TEM measurements as a quantitative guide, relaxation was observed in rocking curves when the misfit dislocation line density was as low as 1 μ-1. Also, interference fringes strongly depend on the presence of interfacial defects. At higher dislocation densities, the diffraction peak from the epitaxial layer broadens considerably but does not shift to a position that represents complete relaxation. Broadening of the substrate diffraction peak also occurs, which is due to dislocations that loop into the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 415
Copyright
Copyright © Materials Research Society 1993

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References

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