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The Strain relaxation and dislocation density of SiGe films in micron size window with different mask material grown by MBE

Published online by Cambridge University Press:  01 February 2011

Xiang-jiu Zhang ,
Hui Xiong ,
Jihuang Hu ,
Zuiming Jiang ,
Yongliang Fan ,
Jun Lin  and
Yuerui Chen
Xiang-jiu Zhang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, P.R.China.
Hui Xiong
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, P.R.China.
Jihuang Hu
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, P.R.China.
Zuiming Jiang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, P.R.China.
Yongliang Fan
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, P.R.China.
Jun Lin
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, P.R.China.
Yuerui Chen
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, P.R.China.
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Abstract

The strain relaxation and the misfit dislocation density in micron size windows with different mask materials were studied. Experiments showed that the misfit dislocation density and the strain in the SiGe films would be affected not only by the size of the windows but the mask material. Experiments also showed that after annealing the SiGe films grown in the micron size windows would be much more stable than films grown in the large area on the same wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.39
Copyright
Copyright © Materials Research Society 2002

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References

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