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Strain Measurements in Si/Si0.5Ge0.5 Superlattices by He Ion Channeling

Published online by Cambridge University Press:  28 February 2011

S. Mantl ,
E. Kasper  and
H. J. Jorke
S. Mantl
Affiliation:
Institut fir Festkorperforschung, KFA JUlich, Postfach 1913, D-5170 JUlich, FRG
E. Kasper
Affiliation:
Institut fir Festkorperforschung, KFA JUlich, Postfach 1913, D-5170 JUlich, FRG
H. J. Jorke
Affiliation:
AEG-Telefunken, Forschungsinstitut, D-7900 Ulm, FRG
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Abstract

He ion channeling experiments have been performed on molecular beam grown Si/SiGe superlattices to determine the strain fields. Angular yield scans provide directly the tetragonal strains in the layers. In Si/Si0.5Ge0.5 superlattices grown on (100) Si only the SiGe layers are strained. Almost equal but opposite strains in the Si and SiGe layers have been found in a Si/Si0.5Ge0.5 superlattice deposited on a 230 nm thick SiO.71Ge0.29 buffer layer. Strain symmetrization yields the minimum elastic energy and thus to the most stable structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 305
Copyright
Copyright © Materials Research Society 1987

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References

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