Skip to main content Accessibility help
×
Home

Strain control in SrRuO3 thin films by using a lattice constant tunable buffer

  • K. Terai (a1), T. Ohnishi (a1), M. Lippmaa (a1), H. Koinuma (a2) and M. Kawasaki (a3)...

Abstract

Heteroepitaxial oxide thin films are usually grown on single crystal substrate which offer a similar lattice constant as the target material. In general, there are no substrates that are suitable for film fabrication and have a good lattice matching. In our previous report, we succeeded in fabricating a lattice constant tunable buffer by using a Ba1-xSrxTiO3 / BaTiO3 bilayer structure on SrTiO3. The in-plane lattice constant of the buffer layer can be tuned from 3.91 to 3.99 Å and the lattice constant is determined only by the Ba/Sr ratio in the Ba1-xSrxTiO3 layer. The buffer is suitable for growing both strain-free films and strained films. In this report we demonstrate the use of the lattice constant tunable buffer for strain control in SrRuO3 magnetic thin films. SrRuO3 has a magnetic anisotropy which changes under lattice strain. We show that the easy axis of magnetization is parallel to the film surface under tensile strain on a Ba0.5Sr0.5TiO3 buffer. The easy axis is perpendicular to the surface in compressively strained films. The tensile strain in a film also results in an increase of the ferromagnetic ordering temperature from a bulk value of 160 K to 164 K.

Copyright

References

Hide All
1. Locquet, J.-P., Perret, J., Fompeyrine, J., Machler, E., Seo, J. W. and Van Tendeloo, G., Nature 394, 453 (1998).
2. Konishi, Y., Fang, Z., Izumi, M., Manako, T., Kasai, M., Kuwahara, H., Kawasaki, M., Terakura, K. and Tokura, Y., J. Phys. Soc. Jpn. 68, 3790 (1999).
3. Klein, L., Dodge, J. S., Geballe, T. H., Kapitulnik, A., Marshall, A. F., Antognazza, L. and Char, K., Appl. Phys. Lett. 66, 2427 (1995).
4. Gan, Q., Rao, R. A., Eom, C. B., Garrett, J. L. and Lee, M., Appl. Phys. Lett. 72, 978 (1998).
5. Terai, K., Lippmaa, M., Ahmet, P., Chikyow, T., Fujii, T., Koinuma, H. and Kawasaki, M., Appl. Phys. Lett. 80, 4437 (2002).
6. Fukumura, T., Ohtani, M., Kawasaki, M., Okimoto, Y., Kageyama, T., Koida, T., Hasegawa, T., Tokura, T. and Koinuma, H., Appl. Phys. Lett. 77, 3426 (2000).
7. Callagan, A., Moeller, C. W. and Ward, R., Inorg. Chem. 5, 1573 (1966).
8. Lippmaa, M., Furumochi, T., Ohashi, S., Kawasaki, M., Koinuma, H. and Nagasawa, H., Rev. Sci. Instrum. 72, 1755 (2000).;
Ohashi, S., Lippmaa, M., Nakagawa, N., Nagasawa, H., Koinuma, H. and Kawasaki, M., Rev. Sci. Instrum. 70, 178 (1999).
9. Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M. and Koinuma, H., Science 266, 1540 (1994).
10. Terai, K., Ohnishi, T., Lippmaa, M., Koinuma, H. and Kawasaki, M., Jpn. J. Appl. Phys. No.2A (2004) submitted.
11. Izumi, M., Nakazawa, K., Bando, Y., Yoneda, Y. and Terauchi, H., J. Phys. Soc. Jpn. 66, 3893 (1997).

Strain control in SrRuO3 thin films by using a lattice constant tunable buffer

  • K. Terai (a1), T. Ohnishi (a1), M. Lippmaa (a1), H. Koinuma (a2) and M. Kawasaki (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed