Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-26T21:56:45.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Stoichiometry Related Phenomena in Low Temperature Grown GaAs

Published online by Cambridge University Press:  22 February 2011

M. Missous  and
S. O'Hagan
M. Missous
Affiliation:
Department of Electrical Engineering and Electronics and Centre for Electronic MaterialsUniversity of Manchester Institute of Science and TechnologyPO Box 88, Manchester M60 1QD, England, UK
S. O'Hagan
Affiliation:
Department of Electrical Engineering and Electronics and Centre for Electronic MaterialsUniversity of Manchester Institute of Science and TechnologyPO Box 88, Manchester M60 1QD, England, UK
Get access

Abstract

The growth of GaAs at low temperatures (LT-GaAs) at or below 250 °C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as grown material. We report on new phenomena associated with the growth of GaAs at 250 °C and we show, for the first time, data on highly electrically active doped material. By careful control of the growth conditions, namely As4/Ga flux ratios, material in which total defect concentrations of less than 1017 cm-3, well below the huge 1020 cm-3 that is normally obtained in LT-GaAs, can be achieved thereby demonstrating that high quality GaAs can in effect be grown at extremely low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 371
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Smith, F.W. Calawa, A.R. Manfra, M.J. andMahoney, L.J. IEEE Electron Device Lett. 9(2), 77 (1988)CrossRefGoogle Scholar
2. Kaminska, M. Weber, E.R. Liliental-Weber, Z., Leon, R. and Rek, Z.U. J.Vac.Sci.Technol. B7,710 (1989)CrossRefGoogle Scholar
3. Missous, M. and O'Hagan, S., J.Appl.Phys, In press Google Scholar
4. Kaminska, M. Liliental-Weber, Z., weber, E.R. andGeorge, T. Appl.Phys.Lett. 54,1881 (1989)CrossRefGoogle Scholar
5. Yu, K. Man, Kaminska, M. and Liliental-Weber, Z., J.Appl.Phys. 72(7),2850, (1992)CrossRefGoogle Scholar
6. Manasreh, M.O. Look, D.C., Evans, K.R. and Stutz, C.E. Phys.Rev.B 41,10272 (1990)CrossRefGoogle Scholar
7. O'Hagan, S. and Missous, M. to be published in J.Appl.Phys.Google Scholar
8. Wood, C.E.C and Joyce, B.A. J.Appl.Phys. 49,4854 (1978)CrossRefGoogle Scholar
9. Enquist, P.M. Lunardi, L.M. welsh, D.F. Wicks, G.W. Shealy, J.R. eastman, L. F. and Calawa, A.R. Ins.Phys.Conf.Ser. 74,599 (1985)Google Scholar
10. Ogawa, M. and Baba, T. Jap.J.Appl.Phys.,24(8),L572 (1985)CrossRefGoogle Scholar
11. tan, T.Y. Tou, H.M. andGosele, U.M. Appl.Phys.A 56,1(1993)CrossRefGoogle Scholar