Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-05-09T23:47:04.444Z Has data issue: false hasContentIssue false
  • English
  • Français

Stoichiometry of GaAs nanodots on GaAs(001)

Published online by Cambridge University Press:  02 July 2015

Anahita Haghizadeh  and
Haeyeon Yang
Anahita Haghizadeh
Affiliation:
Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
Haeyeon Yang*
Affiliation:
Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, U.S.A.
*
*Author to whom correspondence should be addressed; electronic mail: haeyeon.yang@sdsmt.edu
Get access

Abstract

We present a strain-free, self-assembled GaAs nanodots on GaAs(001) surfaces. Nanodots are studied by atomic force microscopy and field emission scanning electron microscopy. Nanodots self-assemble on the GaAs surface when two laser pulses overlap on the surface interferentially. Their stoichiometry is characterized by energy dispersive X-ray spectroscopy in the electron microscope. For the stoichiometry study, electrons with voltages less than 5 kilovolts were used to produce the characteristic X-rays from dots in order to enhance the surface sensitivity. The stoichiometric analysis indicates that the nanodots’ relative composition ratio of Ga over As reaches to that of GaAs substrate when the dot size becomes smaller than 100 nm. The chemical analysis suggests a novel route of strain-free semiconductor nanodots.

Keywords

nanostructurerapid solidificationchemical composition
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1748: Symposium II – Semiconductor Nanocrystals, Plasmonic Metal Nanoparticles, and Metal-Hybrid Structures , 2015 , mrsf14-1748-ii11-06
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

CAPASSO, F., Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices, Science, 235 (1987) 172–176.CrossRefGoogle ScholarPubMed
Mano, T., Kuroda, T., Yamagiwa, M., Kido, G., Sakoda, K., Koguchi, N., Lasing in GaAs∕AlGaAs self-assembled quantum dots, Applied Physics Letters, 89 (2006) 183102.CrossRefGoogle Scholar
Favazza, C., Trice, J., Kalyanaraman, R., Sureshkumar, R., Self-organized metal nanostructures through laser-interference driven thermocapillary convection, Applied Physics Letters, 91 (2007) 043105–043103.CrossRefGoogle Scholar
Favazza, C., Trice, J., Krishna, H., Kalyanaraman, R., Laser-induced patterning of Co nanostructures under ambient conditions, in: Materials Research Society, MRS, Boston, 2005, pp. Y04–06.Google Scholar
Kelly, M.K., Ambacher, O., Dahlheimer, B., Groos, G., Dimitrov, R., Angerer, H., Stutzmann, M., Optical patterning of GaN films, Appl. Phys. Lett., 69 (1996) 1749.CrossRefGoogle Scholar
Clegg, C.M., Yang, H., Guided assembly of quantum dots through selective laser heating, Solar Energy Materials and Solar Cells, 108 (2013) 252–255.CrossRefGoogle Scholar
Long, J.P., Goldenberg, S.S., Kabler, M.N., Pulsed laser-induced photochemical decomposition of GaAs(110) studied with time-resolved photoelectron spectroscopy using synchrotron radiation, Physical Review Letters, 68 (1992) 1014.CrossRefGoogle ScholarPubMed
Meyer, J.R., Kruer, M.R., Bartoli, F.J., Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs, Journal of Applied Physics, 51 (1980) 5513–5522.CrossRefGoogle Scholar
Iwata, H., Asakawa, K., Accumulative Damage of GaAs and InP Surfaces Induced by Multiple-Laser-Pulse Irradiation, Japanese Journal of Applied Physics, 47 (2008) 2161.CrossRefGoogle Scholar
Yang, H., Direct laser patterning of GaAs(001) surfaces, MRS Online Proceedings Library, 1628 (2014).Google Scholar
Rezek, B., Nebel, C.E., Stutzmann, M., Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization, Journal of Applied Physics, 91 (2002) 4220–4228.CrossRefGoogle Scholar
Shank, C.V., Schmidt, R.V., Optical technique for producing 0.1-mu periodic surface structures, Applied Physics Letters, 23 (1973) 154–155.CrossRefGoogle Scholar
Savas, T.A., Farhoud, M., Smith, H.I., Hwang, M., Ross, C.A., Properties of large-area nanomagnet arrays with 100 nm period made by interferometric lithography, Journal of Applied Physics, 85 (1999) 6160–6162.CrossRefGoogle Scholar
Zommer, L., Lesiak, B., Jablonski, A., Gergely, G., Menyhard, M., Sulyok, A., Gurban, S., Determination of the inelastic mean free path of electrons in GaAs and InP after surface cleaning by ion bombardment using elastic peak electron spectroscopy, Journal of Electron Spectroscopy and Related Phenomena, 87 (1998) 177–185.CrossRefGoogle Scholar
Burgess, J.D., Stair, P.C., Weitz, E., Calculations of the surface temperature rise and desorption temperature in laser-induced thermal desorption, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 4 (1986) 1362–1366.CrossRefGoogle Scholar