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STM Study of Initial Growth of Titanium Silicide on Si(III)

  • H. Kuriyama (a1), S. Ohara (a1), K. Ezoe (a1), T. Yamamoto (a1), S. Tatsukawa (a1), M. Umekawa (a1) and S. Matsumoto (a1)...

Abstract

The nucleation and initial growth of titanium suicide on Si(111)7×7 surface has been studied using the scanning tunneling microscopy(STM) in ultrahigh vacuum. At room temperature Ti atoms react with Si atoms and preferentially adsorb on faulted half of the 7×7 surface. By annealing at 600°C, islandlike structures(amorphous titanium suicide) and striplike structures(crystalline titanium suicide) are formed. Annealing at 700°C drives the growth of striplike structures from islandlike structures. The striplike structures grow parallel to specific directions on the 7×7 surface.

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STM Study of Initial Growth of Titanium Silicide on Si(III)

  • H. Kuriyama (a1), S. Ohara (a1), K. Ezoe (a1), T. Yamamoto (a1), S. Tatsukawa (a1), M. Umekawa (a1) and S. Matsumoto (a1)...

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