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STM Observation of Nitrided-Ga on Si

Published online by Cambridge University Press:  10 February 2011

Y. Nakada ,
S. Miwa  and
H. Okumura
Y. Nakada
Affiliation:
Joint Research center fotom technology(JRCAT)-Angstrom Technology Partnership, Higashi 11–4, Tukuba, Ibaraki, 305, Japan, nnakada@jrcat.or.jp
S. Miwa
Affiliation:
Joint Research center fotom technology(JRCAT)-Angstrom Technology Partnership, Higashi 11–4, Tukuba, Ibaraki, 305, Japan, nnakada@jrcat.or.jp
H. Okumura
Affiliation:
JRCAT-National Institute for Advanced Interdisciplinary Research, Higashi 1–1–4, Tukuba, Ibaraki, 305, Japan Electrotechnical Laboratory, Umezono 1–1–4, Tukuba, Ibaraki, 305, Japan
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Abstract

To investigate of the initial stage of GaN growth on Si, 0.2 Ga monolayers (ML) on Si (111) was nitrided and then the nitrided surfaces were observed by scanning tunneling microscopy (STM). An aggregation of islands whose longest edges had a direction rotated 15 ° from Si [110] direction was observed. The shape of islands looked like a pentagon. Surface roughness was estimated for several nitrided conditions. It was found that surface roughness becomes larger as the nitridation process proceeds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 447
Copyright
Copyright © Materials Research Society 1997

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References

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