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STM Light Emission from p-type GaAs (110) surface

Published online by Cambridge University Press:  11 February 2011

M. Hoshino  and
N. Yamamoto
M. Hoshino
Affiliation:
Dept. of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo 152–8551, Japan
N. Yamamoto
Affiliation:
Dept. of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152–8551, Japan
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Abstract

STM stimulated light emissions (STM-LE) from cleaved surfaces of GaAs(110) were investigated using a UHV-STM combined with a light detection system. Clean surfaces of Zn doped GaAs (p=5×1018) were obtained by mechanical cleavage in UHV. Light emission from the cleavage surface showed a single peak in a spectrum, which corresponds to luminescence by the conduction band to acceptor level transition in GaAs. In STM image Zn acceptors show bright tri angular-shaped contrasts, while in photon map they show dark contrasts when taken with a sample bias voltage of 2.0 V and 2.2 V at 80K. This contrast can be explained from the local band bending due to the charging effect or strain effect of the Zn acceptor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G7.23
Copyright
Copyright © Materials Research Society 2003

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References

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