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Stm Imaging of Adsorbed Trimethylgallium on GaAs(001)-(2×4)

  • A. R. Avery (a1), A. J. Mayne (a2), C. M. Goringe (a2), J. H. G. Owen (a2), C. W. Smith (a2), M. O. Schweitzer (a2), T. S. Jones (a1), G. A. D. Briggs (a2) and W. H. Weinberg (a3)...

Abstract

Scanning tunnelling microscopy (STM) has been used to image the adsorption of trimethylgallium (TMGa) on GaAs(001)-(2×4) surfaces prepared in situ by molecular beam epitaxy (MBE). Filled states images of the clean surface are dominated by (2×4) unit cells containing only two As dimers. Upon exposure of this surface to TMGa at room temperature, bright oval-shaped features are observed which are centred on the arsenic dimers of the unit cell. These arise from tunnelling from Ga-C bonds of the adsorbed molecules. At low coverages, preferential adsorption on unit cells adjacent to occupied sites along the [110] direction is observed. A detailed statistical analysis of a large number of adsorption sites shows that there is an increased probability of about 24% for adsorption next to a (2×4) unit cell which is occupied relative to an unoccupied one.

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