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Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures

Published online by Cambridge University Press:  10 February 2011

I. K. Shmagin ,
J. F. Muth ,
S. Krishnankutty ,
R. M. Kolbas ,
S. Keller ,
U. K. Mishra  and
S. P. DenBaars
I. K. Shmagin
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, NC 27695–7911, kolbas@eos.ncsu.edu
J. F. Muth
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, NC 27695–7911, kolbas@eos.ncsu.edu
S. Krishnankutty
Affiliation:
Presently at Honeywell Technology Center, Plymouth MN 55441.
R. M. Kolbas
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, NC 27695–7911, kolbas@eos.ncsu.edu
S. Keller
Affiliation:
Electrical & Computer and Materials Departments, University of California, Santa-Barbara, CA 93106.
U. K. Mishra
Affiliation:
Electrical & Computer and Materials Departments, University of California, Santa-Barbara, CA 93106.
S. P. DenBaars
Affiliation:
Electrical & Computer and Materials Departments, University of California, Santa-Barbara, CA 93106.
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Abstract

InGaN/GaN Heterostructures were deposited on c-plane sapphire substrates by atmospheric pressure Metalorganic Chemical Vapor Deposition (MOCVD). A frequency tripled modelocked Ti-sapphire laser with a 250 fs pulse operating at 280 nm was used for photoexcitation. Photopumped stimulated emission was observed from InGaN/GaN single heterostructures (SH’s) in both edge and surface emitting configurations. A sharp threshold at the onset of stimulated emission and a strong nonlinear dependence of output emission on input power density was observed. Distinct Fabry-Perot modes corresponding to both cavity configurations were also observed. Gain coefficients were measured from an In0. 14Ga0.86N film using the method developed by Shaklee and Leheny for the edge emitting configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1209
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S., Appl. Phys. Lett. 67, 1868 (1995).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
3. Keller, S., Keller, B. P., Kapolnek, D., Ambare, A. C., Masui, H., Coldren, L. A., Mushra, U. K., and DenDaars, S. P., Appl. Phys. Lett. 68, 3147 (1996).Google Scholar
4. Pankove, J.I., in Optical Processes in Semiconductors, (Dover Publications, Inc., New York, 1971), p. 222.Google Scholar
5. Poole, C. D. and Garmire, E., in Optical Bistability, edited by Bowden, C. M., Gibbs, H. M., and McCall, S. L. (Plenum Press, New York, 1984), v. 2, p. 279.Google Scholar
6. Shaklee, K.L., Nahory, R.E., and Leheny, R.F., J. of Luminescence 7, 284 (1973).Google Scholar
7. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 1568 (1996).Google Scholar