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Step-Like Current-Voltage Characteristics in Metal/a-Si:H/Metal Structures

Published online by Cambridge University Press:  01 January 1993

J. Hajto ,
A.J. Snell ,
M.J. Rose ,
A.E. Owen ,
I.S. Osborne ,
T. Kosa ,
A. Holmes  and
R.A.G. Gibson
J. Hajto
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
A.J. Snell
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
M.J. Rose
Affiliation:
Department of A.P.E.M.E., University of Dundee, Dundee DDI 4HN, U.K.
A.E. Owen
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
I.S. Osborne
Affiliation:
Department of A.P.E.M.E., University of Dundee, Dundee DDI 4HN, U.K.
T. Kosa
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
A. Holmes
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
R.A.G. Gibson
Affiliation:
Department of A.P.E.M.E., University of Dundee, Dundee DDI 4HN, U.K.
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Abstract

We present experimental results showing that Cr/p+/V amorphous silicon memory structures at room temperature exhibit step-like current-voltage characteristics associated with discrete, non-random resistance values. The resistance values observed are ∼26kΩ/i where i is an integer or half integer. The low bias current-voltage characteristics prior to the first step suggest that conduction in this regime is governed by tunneling across a region having very small dimensions, of the order of ∼5-7 Å, and having a diameter ∼30-50 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1061
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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