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Steady-State and Transient Electron Transport in ZnO: Recent Progress

Published online by Cambridge University Press:  23 June 2011

Walid A. Hadi ,
Michael Shur ,
Lester F. Eastman  and
Stephen K. O’Leary
Walid A. Hadi
Affiliation:
Department of Electrical and Computer Engineering, University of Windsor, Windsor, Ontario, Canada N9B 3P4
Michael Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A.
Lester F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853 U.S.A.
Stephen K. O’Leary
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
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Abstract

We briefly review some recent results on the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. These results were obtained using an ensemble semi-classical three-valley Monte Carlo simulation approach. They showed that for electric field strengths in excess of 180 kV/cm, the steady-state electron drift velocity associated with bulk wurtzite zinc oxide exceeds that associated with bulk wurtzite gallium nitride. The transient electron transport that occurs within bulk wurtzite zinc oxide was studied by examining how electrons, initially in thermal equilibrium, respond to the sudden application of a constant electric field. These transient electron transport results demonstrated that for devices with dimensions smaller than 0.1 μm, gallium nitride based devices will offer the advantage, owing to their superior transient electron transport, while for devices with dimensions greater than 0.1 μm, zinc oxide based devices will offer the advantage, owing to their superior high-field steady-state electron transport.

Keywords

electronic materialII-VIZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1327: Symposium G – Complex Oxide Materials for Emerging Energy Technologies , 2011 , mrss11-1327-g03-20
Copyright
Copyright © Materials Research Society 2011

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