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Stark Shift and Field Induced Tunneling in Doped Quantum Wells with Arbitrary Potential Profiles

Published online by Cambridge University Press:  10 February 2011

S. Panda ,
B. K. Panda ,
S. Fung  and
C. D. Beling
S. Panda
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
B. K. Panda
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong
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Abstract

The energies and resonance widths of single doped quantum wells consisting of Al-GaAs/GaAs with rectangular and annealing induced diffusion modified shapes are calculated under an uniform electric field using the stabilization method. The electronic structure is calculated without an electric field in the finite temperature density functional theory with exchange-correlation potential treated in the local density approximation. Our scheme for solving the Schrödinger and Poisson equations is based on the Fourier series method. The electric field is added to the self-consistent potential and energies are obtained as a function of the combined width of the well and barriers. This yields us the stabilization graph from which the energies and resonance widths at different field strengths are extracted using the Fermi Golden rule.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 165
Copyright
Copyright © Materials Research Society 1997

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References

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