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The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

Published online by Cambridge University Press:  01 February 2011

Arno H.M. Smets ,
Chris R. Wronski ,
Miro Zeman  and
M. van de Sanden
Arno H.M. Smets
Affiliation:
a.h.m.smets@tudelft.nlarnosmets@gmail.com, Delft University of Technology, Delft, Netherlands
Chris R. Wronski
Affiliation:
crwece@engr.psu.edu, Pennsylvania State University, State College, United States
Miro Zeman
Affiliation:
m.zeman@tudelft.nl, Delft University of Technology, Delft, Netherlands
M. van de Sanden
Affiliation:
m.c.m.v.d.sanden@tue.nl, Eindhoven University of Technology, Eindhoven, Netherlands
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Abstract

In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

Keywords

amorphousdefectsSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A14-02
Copyright
Copyright © Materials Research Society 2010

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