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“Stable” Defects as, Metastable Defects in a-Si:H

Published online by Cambridge University Press:  26 February 2011

David Redfield
David Redfield*
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305–2205
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Abstract

An expanded kinetic description of formation and anneal of metastable defects (MSDs) in a-Si:H shows that (1)the apparently “stable” defects are just a statistical subset of the total density of potential MSD sites; (2)the temperature dependence of the saturation density of MSDs has three distinct regions that have not been recognized; (3)the effects of doping in increasing both the density of “stable” defects and the sensitivity to light are readily explained by an increase in the density of total potential defect sites, not just defects; (4)the defects in good undoped material are chemical in origin, not intrinsic to the disordered state of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 561
Copyright
Copyright © Materials Research Society 1987

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References

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