Skip to main content Accessibility help
×
Home

SSRM and SCM observation of modified lateral diffusion of As, BF2 and Sb induced by nitride spacers.

  • P. Eyben (a1), N. Duhayon (a2), C. Stuer (a2), I. De Wolf (a2), R. Rooyackers (a2), T. Clarysse (a2), W. Vandervorst (a2) and G. Badenes (a2)...

Abstract

Initial studies (using Scanning Spreading Resistance Microscopy) on the lateral diffusion of B and As have shown an important influence of the thickness of oxy/nitride spacers. The latter phenomenon was tentatively ascribed to stress enhanced diffusion under the spacer region [1]. These studies have been complemented with Scanning Capacitance Microscopy (SCM) measurements, which confirm the SSRM-data. In fact both techniques shows a similar increase in lateral diffusion with increasing spacer thickness (∼ 0.2 nm/nm spacer thickness), whereby no effect is observed on the vertical diffusion. When using spacers with or without TEOS-liner, fairly similar enhancements could be seen. Micro-Raman and CBED stress measurements for these cases do however show a large reduction in stress when a TEOS-liner is used, suggesting that the correlation (at least to the final) stress is not really justified. A possible explanation could however be that the lateral diffusion occurs before the stress relaxation within the thermal treatment. In order to elucidate the diffusion mechanism (initial stress, interstitials, hydrogen incorporation, TED,..) we have expandedthe experimental matrix with a vacancy diffuser such as Sb and simulated the potential H-incorporation duringthe nitride deposition by a hydrogen anneal. Moreover we also have studied the impact of TED by splits with RTP-anneals before the nitride deposition.

Copyright

References

Hide All
[1] Eyben, P., Duhayon, N., Stuer, C., Wolf, I. De, Rooyackers, R., Clarysse, T., Vandervorst, W. and Badenes, G.SSRM and SCM observation of enhanced lateral Asand BF2-diffusion induced by nitride spacers.”, Proceedings Material Research Society (MRS) Spring 2000, Symp. B Vol. 610, paper b2.2 (2000)
[2] Wolf, P. De, Clarysse, T., Vandervorst, W., Snauwaert, J., Hellemans, L., “1 and 2D carrier profiling in semiconductors by nanoSRP.”, J. Vac. Sci. tech B14(1996)380385
[3] Williams, C.C., Slinkman, J., Hough, W.P., Wickramasinghe, H.K., “Lateral dopant profiling on a 100nm scale by scanning capacitance microscopy”, J.Vac.Sci.Technol. A8(2), p. 895, 1990
[4] Aziz, M.J., “Thermodynamics of diffusion under pressure and stress: relation to point defect mechanisms”, Appl. Phys. Lett. 70 (21), 26 May 1997.
[5] Eyben, P., Xu, M., Duhayon, N., Clarysse, T., Callewaert, S. and Vandervorst, W., “Scanning Spreading Resistance Microscopy and Spectroscopy for routine and quantitative 2D-carrier profiling”, Proc. USJ2001 Workshop (to be published in JVST Jan/Feb 2002)
[6] Armigliato, A., Balboni, R., Wolf, I. De, Frabboni, S., Janssens, K.G.F. and Vanhellemont, J., “Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy”,Inst. Phys. Conf. Ser. No 134:section 5, april 1993.

SSRM and SCM observation of modified lateral diffusion of As, BF2 and Sb induced by nitride spacers.

  • P. Eyben (a1), N. Duhayon (a2), C. Stuer (a2), I. De Wolf (a2), R. Rooyackers (a2), T. Clarysse (a2), W. Vandervorst (a2) and G. Badenes (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed