Hostname: page-component-84b7d79bbc-x5cpj Total loading time: 0 Render date: 2024-07-31T16:33:43.022Z Has data issue: false hasContentIssue false
  • English
  • Français

SrTiO3 Thin Film Varactors on Si for Microwave Applications

Published online by Cambridge University Press:  11 February 2011

Andrei Vorobiev ,
Par Rundqvist ,
Khaled Khamchane  and
Spartak Gevorgian
Andrei Vorobiev
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden Institute for Physics of Microstructures RAS, N. Novgorod, GSP-105, 603600, Russia
Par Rundqvist
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
Khaled Khamchane
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Gothenburgs University, SE-41296 Gothenburg, Sweden
Spartak Gevorgian
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden Microwave and High Speed research Center, Ericsson Microwave Systems, 431 84 Molndal, Sweden
Get access

Abstract

Dielectric properties of SrTiO3 (STO) thin films in Au/Pt/STO/Pt/TiO2/SiO2/Si structure are studied at microwave frequencies. STO films with thickness of 300 nm were grown by laser ablation at different temperatures on templates of Pt/TiO2/SiO2 on Si with resistivity of 5 kQ-cm. XRD measurements reveal highly textured (111)STO films with small amount of (100) and (110) domains. The full with at half maximum of the rocking curve of (11 1)STO domains is about 2 degrees. Circular Au/Pt top electrodes with diameters in the range of 10–60 μm were formed by e-beam evaporation and lift-off process. The on chip microwave impedance of devices was measured in the frequency range of 45 MHz-45 GHz as a function of DC electric field in the range of 0–800 kV/cm. The loss tangent is less than 0.06 in the whole frequency range. Application of DC bias results in resonant absorption of microwave power at frequencies of 1.3, 3.0, 4.7, 6.4, and 9.7 GHz. The relative change of the dielectric permittivity under 800 kV/cm DC field is more than 20% in the whole frequency range. The results indicate that the varactors based on these STO films are suitable for tunable microwave applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U6.4
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. York, R. A., Nagra, A. S., Periaswamy, P., Auciello, O., Streiffer, S. K., Im, J., Integrated ferroelectrics, 34, 1617 (2001).Google Scholar
2. Ma, Z., Becker, A. J., Polakos, P., Huggins, H., Pastalan, J., Wu, H., Wong, Y. H., Mankiewich, P., IEEE Transactions on Electron Devices 45(8), 1811–1816 (1998).Google Scholar
3. Kondo, Ichiharu, Yoneyama, Takao, Takenaka, Osamu, Kinbara, Akira, J. Vac. Sci. Technol. A 10(6), 3456–3459 (1992).Google Scholar
4. Baumert, B. A., Chang, L.-H., Matsuda, A. T., Tsai, T.-L., Tracy, C. J., Gregory, R. B., fejes, P. L., Cave, N. G., Chen, W., Taylor, D. J., Otsuki, T., Fujii, E., Hayashi, S., Suu, K., J. Appl. Phys. 82(5), 2558–2566 (1997).Google Scholar
5. Jonscher, A. K., Dielectric relaxation in solids, Chelsea Dielectrics Press Ltd 1983, 89.Google Scholar
6. Silverman, B. D., Phys. Rev. 125(6), 1921–1930 (1962).Google Scholar
7. Lee, Byoung Taek, Hwang, Cheol Seong, Appl. Phys. Lett. 77(1), 124–126 (2000).Google Scholar
8. Jeon, Young-Ah, Choi, Eun-Suck, Seo, Tae-Suck, and Yoon, Soon-Gil, Appl. Phys. Lett. 79(7), 1012–1014(2001).Google Scholar
9. Jonscher, A. K., Dielectric relaxation in solids, Chelsea Dielectrics Press Ltd, 1983, 163.Google Scholar
10. Krowne, Clifford M., Daniel, Maurice, Kirchoefer, Steven W., and Pond, Jeffrey M., IEEE Transactions on Microwave Theory and Techniques 50(2), 537–548 (2002).Google Scholar