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Spreading Resistance Profiling Study of GeSi/Si Structures by High Dose Ge Implantation into Si

  • W.Y. Cheung (a1), S.P. Wong (a1), I.H. Wilson (a1), Tonghe Zhang (a2) and Paul K. Chu (a3)...

Abstract

Hetero-structures of GeSi layers on Si have been produced by high dose Ge implantation into p-type (100) Si wafers at 150 or 300 keV at various doses. From spreading resistance profiling measurements, it is found that for samples implanted at 300 keV at a sufficiently high dose, there is an unexpected resistivity type conversion due to the Ge implantation. The depths of the n-p junction formed as-implanted can be larger than 1.5 /xm, far beyond the Ge projected range. Upon annealing, the junction position moves toward the surface and eventually stops at a depth corresponding to the thickness of the GeSi layer. However, no such n-p junction formation was observed in the spreading resistance profiles of the 150 keV implanted samples. These spreading resistance results are discussed in conjunction with results from RBS and SIMS experiments.

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1 King, C.A., Hoyt, J.L. and Gibbons, J.F., IEEE Trans. Electron Devices, ED-36, 2093 (1989).
2 Namavar, F. and Soref, R.A., J. Appl. Phys. 70, 3370 (1991)
3 Zhou, G.L. and Morkoc, H., Thin Solid Films, 231, 125 (1993)
4 Willander, M.W., Shen, G.D., Xu, D.X. and Ni, W.X., J. Appl. Phys. 63, 5035 (1988).
5 Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S. and Stork, J.M.C., IEEE Electron Device Lett. 9, 165 (1988)
6 Aketagawa, K.I., Tatsumi, T., Hiroi, M., Niino, T. and Sakai, J., Jpn. J. Appl. Phys. Pt. 1, 31, 1432(1992)
7 Paine, D.C., Howard, D.J. and Stroffel, N.G., J. Electron. Mater. 20, 735 (1991)
8 Posselt, M., Nucl. Instru. and Meth. B-80/81, 28 (1993).
9 Sze, S.M., Physics of Semiconductor Devices. 2nd ed. (John Wiley & Sons, New York, 1981), P. 21.

Spreading Resistance Profiling Study of GeSi/Si Structures by High Dose Ge Implantation into Si

  • W.Y. Cheung (a1), S.P. Wong (a1), I.H. Wilson (a1), Tonghe Zhang (a2) and Paul K. Chu (a3)...

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