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Spreading Resistance Profiling Study of GeSi/Si Structures by High Dose Ge Implantation into Si

Published online by Cambridge University Press:  21 February 2011

W.Y. Cheung ,
S.P. Wong ,
I.H. Wilson ,
Tonghe Zhang  and
Paul K. Chu
W.Y. Cheung
Affiliation:
Dept. of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Hong Kong.
S.P. Wong
Affiliation:
Dept. of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Hong Kong.
I.H. Wilson
Affiliation:
Dept. of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Hong Kong.
Tonghe Zhang
Affiliation:
Institute of Low Energy Nuclear Physics, Radiation Beam & Materials Engineering Laboratory, Beijing Normal University, Beijing, China.
Paul K. Chu
Affiliation:
Charles Evans & Associates, Redwood City, CA, USA.
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Abstract

Hetero-structures of GeSi layers on Si have been produced by high dose Ge implantation into p-type (100) Si wafers at 150 or 300 keV at various doses. From spreading resistance profiling measurements, it is found that for samples implanted at 300 keV at a sufficiently high dose, there is an unexpected resistivity type conversion due to the Ge implantation. The depths of the n-p junction formed as-implanted can be larger than 1.5 /xm, far beyond the Ge projected range. Upon annealing, the junction position moves toward the surface and eventually stops at a depth corresponding to the thickness of the GeSi layer. However, no such n-p junction formation was observed in the spreading resistance profiles of the 150 keV implanted samples. These spreading resistance results are discussed in conjunction with results from RBS and SIMS experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 201
Copyright
Copyright © Materials Research Society 1995

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