Skip to main content Accessibility help
×
Home

A Spin-on Dielectric Material for High Aspect Ratio Gap Fill

  • Wei Chen (a1), Sheng Wang (a1), Ather Ashraf (a1), Edward Somerville (a1), Gerard Nowaczyk (a1), BK Hwang (a1), JK Lee (a1) and Eric S. Moyer (a1)...

Abstract

This communication describes the results of a potential spin-on glass (SOG) solution for narrow and high aspect ratio trench fill in both shallow trench isolation (STI) and premetal dielectric (PMD) applications. We have focused our development work on a hydrogen silsesquioxane (HSQ, (HSiO3/2)n) material, which offers the advantage of a carbon free gap fill solution. The main challenge for carbon-free SOG materials is to achieve material densification in the nano-scale gaps during thermal processing that of the gap filled material during the wet cleaning steps. This paper reports some approaches and findings on material densification in the nano-scale gaps and the results of subsequent wet etch tests.

    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      A Spin-on Dielectric Material for High Aspect Ratio Gap Fill
      Available formats
      ×

      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      A Spin-on Dielectric Material for High Aspect Ratio Gap Fill
      Available formats
      ×

      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      A Spin-on Dielectric Material for High Aspect Ratio Gap Fill
      Available formats
      ×

Copyright

References

Hide All
1. Bayman, A.et al., US Patent 6,596,654 B1,2003
2. Shimizu, Y., Aoki, T., and Funayama, O., US Patent, 6,310,168 B1, 2001
3. Park, J.H.et al., J. Electrochem. Soc., 2003. 150: p. G359.
4. Li, Z.et al. Proceedings of Material Research Society Meetings, 2002, Vol 716, 325.

A Spin-on Dielectric Material for High Aspect Ratio Gap Fill

  • Wei Chen (a1), Sheng Wang (a1), Ather Ashraf (a1), Edward Somerville (a1), Gerard Nowaczyk (a1), BK Hwang (a1), JK Lee (a1) and Eric S. Moyer (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed