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Spin-Dependent Transport in GaN Light Emitting Diodes

Published online by Cambridge University Press:  21 February 2011

M. S. Brandt ,
N. M. Reinacher ,
O. Ambacher  and
M. Stutzmann
M. S. Brandt
Affiliation:
Walter Schottky Institut, Technische Universität München, Am Coulombwall, D85748 Garching, Germany, mbrandt@physik.tu-muenchen.de
N. M. Reinacher
Affiliation:
Walter Schottky Institut, Technische Universität München, Am Coulombwall, D85748 Garching, Germany, mbrandt@physik.tu-muenchen.de
O. Ambacher
Affiliation:
Walter Schottky Institut, Technische Universität München, Am Coulombwall, D85748 Garching, Germany, mbrandt@physik.tu-muenchen.de
M. Stutzmann
Affiliation:
Walter Schottky Institut, Technische Universität München, Am Coulombwall, D85748 Garching, Germany, mbrandt@physik.tu-muenchen.de
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Abstract

Electrically detected magnetic resonance (EDMR) is used to study recombination processes in two types of gallium nitride light emitting diodes: in m/i/n/n+- and InGaN/AlGaN double-heterostructure devices. In the MIS-diodes, two resonances at g=1.96 and 2.00, corresponding to the effective mass donor and a deep defect are observed at room temperature. At low temperatures, an acceptor-related resonance at g=2.06 is visible as well. After current degradation, the spectra are dominated by the defect resonance, indicating that the creation of this defect is responsible for the decreased electroluminescence efficiency. In the double-heterostrucrure devices, EDMR can only be observed below 60 K showing the g=2.00 defect resonance. The same defect resonance is also observed in conventional electron spin resonance experiments under illumination (light-induced ESR).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 657
Copyright
Copyright © Materials Research Society 1996

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References

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