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Spin-Dependent Optical Processes in II-VI Diluted Magnetic Semiconductor Nanostructures

Published online by Cambridge University Press:  01 February 2011

Yasuo Oka
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai 980–8577, Japan
Kentaro Kayanuma
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai 980–8577, Japan
Mio Sakuma
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai 980–8577, Japan
Ayahito Uetake
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai 980–8577, Japan
Izuru Souma
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai 980–8577, Japan
Zhanghai Chen
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai 980–8577, Japan
Akihiro Murayama
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2–1–1, Aoba-ku, Sendai 980–8577, Japan
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Abstract

Nanostructures of diluted magnetic semiconductors have potential possibility for the spin electronics application due to their large magneto-optical effects and the quantum confinement effects for band electrons. We have fabricated quantum wells and quantum dots by II-VI diluted magnetic semiconductors of Cd1-xMnxTe, Zn1-xMnxTe and Zn1-x-yCdyMnxSe. These nanostructures showed spin injection, spin switching and ultrafast spin relaxation processes derived in the confined nanostructures. Hybrid structures consisting of diluted magnetic semiconductor and Co showed Mn spin polarizations induced by the Co wire shape.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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