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Spectroscopic Study of Hydrogen Induced Defect in a-Ge:H

Published online by Cambridge University Press:  26 February 2011

Shu Jin  and
Lothar Ley
Shu Jin
Affiliation:
Institut für Technische Physik, Universität Erlangen, Erwin-Rommel-Str.1 D-8520 Erlangen, Germany
Lothar Ley
Affiliation:
Institut für Technische Physik, Universität Erlangen, Erwin-Rommel-Str.1 D-8520 Erlangen, Germany
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Abstract

Total yield photoelectron spectroscopy has been used to study the electronic structure change of UHV evaporated a-Ge subjected to posthydrogenation and various annealing cycles. We identify in R.T. hydrogenated a-Ge:H a new hydrogen induced defect at about Ev + 0.45eV, which can be healed upon 300°C annealing. This new defect accounts for the defect density gradient of hydrogenated amorphous semiconductors, spanning the range from ∼ 1018 cm−3 at the growing surface to 1018−1015 cm−3 in the bulk, depending on growth condition and time. The origin of this new defect is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 403
Copyright
Copyright © Materials Research Society 1991

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