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Spectroscopic Investigations of Crystallinity and Electronic-Structural Transitions Due to Solid Phase Crystallization of Amorphous Si1-xGex

Published online by Cambridge University Press:  15 February 2011

S. Yamaguchi ,
N. Sugh ,
K. Nakagawa  and
M. Miyao
S. Yamaguchi
Affiliation:
Central Research Lab., Hitachi Ltd., Tokyo185-8601, Japan, yamaguci@crl.hitachi.co.jp
N. Sugh
Affiliation:
Central Research Lab., Hitachi Ltd., Tokyo185-8601, Japan, yamaguci@crl.hitachi.co.jp
K. Nakagawa
Affiliation:
Central Research Lab., Hitachi Ltd., Tokyo185-8601, Japan, yamaguci@crl.hitachi.co.jp
M. Miyao
Affiliation:
Central Research Lab., Hitachi Ltd., Tokyo185-8601, Japan, yamaguci@crl.hitachi.co.jp
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Abstract

Solid phase crystallization of Si1-xGex, have been investigated by means of change in crystallinity and crystallization temperature using the ellipsometric spectroscopy (2-5 eV). Dispersion analysis on the spectra revealed that the Si1-xGex alloys show both abrupt increase and rapid saturation of the crystallinities according to the structural transitions. The saturated values of crystallinities did not reach those of single crystals in all samples and rapidly decreased with increase of Ge concentration. Ion-implanted amorphous SilxGe, exhibited much lower activation energies of re-crystallization than those of the deposited amorphous samples. Furthermore, their crystallization temperature were strongly depend on the species of implanted ions such as As+ and BF2+. It was found that the crystallization velocity of the As+-implanted Si1-xGex was estimated as 4 times faster than that of the BF2+-implanted Si1-xGex. Itinerant property of Ge in Si may give rise to the decrease of the crystallinities as well as the decrease of the activation energy of solid phase crystallization which may be strongly affected by the catalytic effects of the implanted impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 225
Copyright
Copyright © Materials Research Society 1999

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References

1. Abstreiter, G., Brugge, H., and Wolf, T., Phys. Rev. Lett. 54, p.2441 (1985).Google Scholar
2. Ismail, K., Meyerson, B. S., and Wang, P. J., Appl. Phys. Lett. 58, p.2117 (1991).Google Scholar
3. Miyao, M. and Nakagawa, K., Jpn. J. Appl. Phys. 33, p.3791 (1994).Google Scholar
4. Iyer, S. S., Tsang, J. C., Copel, M. C., Pukite, P. R., and Tromp, R. M., Appl. Phys. Lett. 54, p.219 (1989).Google Scholar
5. Humlicek, J., Garriga, M., Alonso, M. I., and Cardona, M., J. Appl. Phys. 65, p. 2827 (1989).Google Scholar
6. Sze, S. M., in Physics of Semiconductor Devices (Wiley, New York, 1981), p.42.Google Scholar
7. Kringhoj, P. and Elliman, R. G., Phys. Rev. Lett. 73, p.858 (1994).Google Scholar