Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-25T05:14:03.896Z Has data issue: false hasContentIssue false
  • English
  • Français

Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

W. Götz ,
M. D. McCluskey ,
N. M. Johnson ,
D. P. Bour  and
E. E. Haller
W. Götz
Affiliation:
Hewlett-Packard Company, San Jose, California 95131, USA
M. D. McCluskey
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
D. P. Bour
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
E. E. Haller
Affiliation:
Lawrence Berkeley Laboratory and the University of California, Berkeley, California 94720, USA
Get access

Abstract

Mg-doped GaN films grown by metalorganic chemical vapor deposition were characterized by variable-temperature Hall-effect measurements and Fourier-transform infrared absorption spectroscopy. As-grown, thermally activated, and deuterated Mg-doped GaN samples were investigated. The existence of Mg-H complexes in GaN is demonstrated with the observation of a local vibrational mode (LVM) at 3125 cm-1 (8 K). At 300 K this absorption line shifts to 3122 cm-1. The intensity of the LVM line is strongest in absorption spectra of as-grown GaN. Mg which is semi-insulating. Upon thermal activation, the intensity of the LVM line significantly decreases and an acceptor concentration of 2×1019cm-3 is derived from the Hall-effect data. After deuteration at 600°C the resistivity of the Mg-doped GaN increased by four orders of magnitude. A LVM line at 2321 cm-1 (8 K) appears in the absorption spectra which is consistent with the isotopie shift of the vibrational frequency when D is substituted for H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 117
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Akasaki, I., Amano, H., Koide, N., Kotaki, M., and Manabe, K., Physica B 185, 428 (1993)Google Scholar
2 Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys 35, L74 (1996)Google Scholar
3 Strite, S. and Morkoç, H., J. Vac. Sci. Technol. B 10, 1237 (1992)Google Scholar
4 Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989)Google Scholar
5 Nakamura, S., Mukai, T., Senoh, M., and Iwasa, N., Jpn. J. Appl. Phys. 31, L139 (1992)Google Scholar
6 Chevallier, J., Clerjaud, B., and Pajot, B., Hydrogen in Semiconductors, edited by Pankove, J.L. and Johnson, N.M. (Academic San Diego, 1991), Chap. 13.Google Scholar
7 Hydrogen in Semiconductors, eds. Pankove, J.I. and Johnson, N.M., Semicondcutors and Semimetals Vol. 34 (Academic Press, San Diego, 1991)Google Scholar
8 Neugebauer, J. and Van de Walle, C.G., Phys. Rev. Lett. 75, 4452 (1995)Google Scholar
9 Götz, W., Johnson, N.M., Street, R.A., Amano, H., and Akasaki, I., Appl. Phys. Lett. 66, 1340 (1995)Google Scholar
10 Johnson, N.M., in Hydrogen in Semiconductors, edited by Pankove, J.L. and Johnson, N.M. (Academic, San Diego, CA, 1991), p. 118 Google Scholar
11 Götz, W., Johnson, N.M., Bour, D.P., McCluskey, M.D., and Haller, E.E., Appl. Phys. Lett. 69, 3725 (1996)Google Scholar
12 Schaub, R., Pensi, G., Schulz, M., and Holm, C., Appl. Phys. A 34, 215 (1984)Google Scholar
13 Newman, R.C., in Infrared Studies of Crystal Defects, (Taylor and Francis Ltd., London, (1973)Google Scholar
14 Stavola, M. and Pearton, S.J., Hydrogen in Semiconductors, edited by Pankove, J.L. and Johnson, N.M. (Academic San Diego, 1991), Chap. 8.Google Scholar