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Spectroscopic Ellipsometry Studies of Tb-doped SiO2 Thin Films

Published online by Cambridge University Press:  01 February 2011

Zhe Chuan Feng ,
Zhe Chuan Feng ,
Yia Chung Chang  and
Ting Kai Li
Zhe Chuan Feng
Affiliation:
zcfeng@cc.ee.ntu.edu.tw, National Taiwan University, Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC., Taipei, 106-17, Taiwan, 886-2-3366-3543, 886-2-2367-7467
Zhe Chuan Feng
Affiliation:
zcfeng@cc.ee.ntu.edu.tw, National Taiwan University, Graduate Institute of Electro-Optical Engine ering & Department of Electrical Engineering, Taipei, 106-17, Taiwan
Yia Chung Chang
Affiliation:
yiachang@gate.sinica.edu.tw, Academia Sinica, Research Center for Applied Sciences, 128 Section 2, Academia Road Nankang, Taipei, 115, Taiwan
Ting Kai Li
Affiliation:
TLi@sharplabs.com, Sharp Labs of America, Inc., 5700 Pacific Rim Blvd, Camas, WA, 98607, United States
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Abstract

The optical properties of Tb-doped SiO2 films have been studied from multi-wavelength spectroscopic ellipsometry (SE) measurements performed over the 250–1100 nm wavelength range. The SE modeling carried out with care to adhere as much to the ellipsometric fitting qualities. The refractive index dispersions, the layer thickness, and the lateral thickness variation of the films are given and discussed regarding the optical constitution of these films and the ellipsometric validity of these parameters

Keywords

Tbsputteringoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-14
Copyright
Copyright © Materials Research Society 2007

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References

1. Seo, Se-Young and Shin, Jung H., "Enhancement of the green, visible Tb+3luminescence from Tb-doped silicon-rich silicon oxide by C co-doping." Appl. Phys. Lett., 84, pp. 4379–4381 (2004).Google Scholar
2. Gao, Wei, Ono, Tingkai Li. Yoshi and Hsu, Sheng Teng "Photoluminesence andelectroluminescence studies on Tb doped silicon rich oxide materials and devices." Journal of rare earths, 24, 673–678 (2006).Google Scholar
3. Zollner, Stefan, Chen, J. G., and Duda, Erika, "Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si, " J. Appl. Phys., 85, pp. 8353–8361 (1999).Google Scholar
4. Chen, T. P., Liu, Y., Tse, M. S., and Ho, P. F., "Depth profiling of Si nanocrystals in Si-implanted SiO2 films by spectroscopic ellipsometry," Appl. Phys. Lett.l, 81, pp. 4724–4726 (2002).Google Scholar
5. Easwarakhanthan, T., Assouar, M. B., Pigeat, P., and Alnot, P., "Optical models for radio-frequency- magnetron reactively sputtered AlN films," J. Appl. Phys., 98, pp. 073531 (2005).Google Scholar
6. Kamlet, Leonard I., Fred, L. Terry, Jr , "Dielectric function modeling for In1-yAlyAs on InP," Thin Solid Films, 313-314, pp. 177–182 (1998).Google Scholar
7. Lioudakis, Emmanouil, Nassiopoulou, Androula, Othonos, Andreas, "Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing," Thin Solid Films, 496, pp. 253–258 (2006).Google Scholar
8. Ahn, H., Shen, C.-H., Wu, C. -L., and Gwo, S., "Spectroscopic ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied carrier concentrations," Appl. Phys. Lettl, 86, pp. 201905 (2005).Google Scholar
9. Gils, S. Van,Melendres, C. A. and Terryn, H., "Quantitative chemical composition of thin films with infrared spectroscopic ellipsometry: application to hydrated oxide films on aluminium," Surf. Interface Ana, 35, pp. 387–394 (2003)Google Scholar
10. Shrestha, R.P., Yang, D., Irene, E.A., "Ellipsometry study of poly(o-methoxyaniline) thin films," Thin Solid Films, 500, pp. 252–258 (2006).Google Scholar
11. Suzuki, Iwao, Ejima, Masahiro, Watanabe, Kenichi, Xiong, Yi-Ming, Saitoh, Tadashi, "Spectroscopic ellipsometry characterization of Ba0.7Sr0.3TiO3 thin films prepared by the sol-gel method," Thin Solid Films, 313-31, pp. 214–217 (1998).Google Scholar
12. Hilfiker, James N., Bungay, Corey L, Synowicki, Ron A., Craig, Thomas E. Tiwald Herzinger, M., Johs, Blaine, Pribil, Greg K., and Woollam, John A., "Progress in spectroscopic ellipsometry: Applications from vacuum ultraviolet to infrared," J. Vac. Sci. Technol A., 21, pp. 1103–1108 (2003).Google Scholar