Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T21:07:01.089Z Has data issue: false hasContentIssue false

Spectroscopic and Topographic Investigations of Nanoparticle Abrasive retention in Polyurethane CMP Pads for Cu CMP

Published online by Cambridge University Press:  01 February 2011

Iftikhar Ul-hasan
Affiliation:
iulhasan@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science & Engineering, 255 Fuller Rd., Albany NY 12203, United States
Robert Geer
Affiliation:
rgeer@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science & Engineering, 255 Fuller Rd., Albany, NY, 12203, United States, 518 956-7003, 518 956-7003
Get access

Abstract

A spectroscopic and topographic investigation of abrasive nanoparticle retention in polyurethane chemical mechanical planarization (CMP) pads has been carried out as a function of ex situ pad conditioning parameters for Cu CMP. X-ray photoelectron spectroscopy (XPS) and scanning electron microscope energy dispersive spectroscopy (SEM-EDS) were utilized to quantitatively characterize the presence of alumina nanoabrasive in the pad following Cu CMP. As expected, conditioning did not modify the overall pad morphology but did increase local asperity roughness with increasing conditioner downforce. As expected, the magnitude of the conditioner downforce reduced the overall average alumina nanoabrasive retention, albeit weakly, as determined via XPS. However, local EDS analysis revealed that increased downforce does significantly reduce nanoabrasive retention at pad asperities. In contrast, increased downforce increased the amount of nanoabrasive present in the polyurethane pad surface pores. Moreover, overall conditioning time was shown to be a more dominant parameter compared to conditioner downforce regarding removal of abrasive particles from both pad asperities and pores.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1The International Technology Roadmap for Semiconductors Semiconductor Industry Association, San Jose, CA, (2005).Google Scholar
2 Ahmadi, G. and Xia, X., J. Electrochem. Soc., 148 (3), G99–G109 (2001).Google Scholar
3 Bajaj, R, Desai, M, Jairath, R, Stell, M, Tolles, R. Mater. Res. Soc. Symp. Proc., 337, 637(1994)Google Scholar
4 Wang, D., Thesis, M.S., Arizona State University, Phoenix, AZ (1997).Google Scholar
5 Zhou, Y. and Davis, E., Mater. Sci. Eng., B 68, 91 (1999).Google Scholar