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Spectroellipsometry Studies of Znl-x.cdxSe: From Optical Functions to Heterostructure Characterization

Published online by Cambridge University Press:  15 February 2011

Joungchel Lee ,
Byungyou Hong ,
J. S. Burnham ,
R. W. Collins ,
F. Flack  and
N. Samarth
Joungchel Lee
Affiliation:
Also affiliated with the Materials Research Laboratory
Byungyou Hong
Affiliation:
Also affiliated with the Materials Research Laboratory
J. S. Burnham
Affiliation:
Also affiliated with the Materials Research Laboratory
R. W. Collins
Affiliation:
Also affiliated with the Materials Research Laboratory
F. Flack
Affiliation:
Department of Physics, The Pennsylvania State University, University Park PA 16802.
N. Samarth
Affiliation:
Department of Physics, The Pennsylvania State University, University Park PA 16802.
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Abstract

The dielectric functions of 0.5–1.5 μm Znl-xCdxSe (0≤x≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximation for energies less than the fundamental gap at E0 and using a sum of Lorentz oscillators above the gap region. As an example of the usefulness of the approach, expressions are provided that yield the index of refraction of Znl-xCdxSe (0≤x≤ 0.34) for 1.5 eV≤E<E0- As a second example, we have determined the composition and thickness of a Znl-xCdxSe quantum well between ZnSe barrier layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 377
Copyright
Copyright © Materials Research Society 1996

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References

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