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Spectral Response of GaN P-N Junction Photovoltaic Structures

  • D. Walker (a1), X. Zhang (a1), P. Kung (a1), A. Saxler (a1), J. Xu (a1) and M. Razeghi (a1)...

Abstract

GaN ultraviolet photovoltaic and photoconductive detectors were grown on sapphire substrates by metalorganic chemical vapor deposition. The spectral response was analyzed considering the detector structure of a p-n junction connected back-to-back with a Schottkty barrier. Based on the one-dimensional model of abrupt p-n junctions, the diffusion length of minority carriers was derived to be about 0.1 μm in n-GaN. To further characterize the n-GaN material, photoconductivity experiments have also been realized. The majority carrier lifetime of about 0.1 ms was obtained by analyzing the voltage-dependent responsivity of GaN photoconductors The current-responsivity under a bias of 8 V was about 1 A/W.

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Spectral Response of GaN P-N Junction Photovoltaic Structures

  • D. Walker (a1), X. Zhang (a1), P. Kung (a1), A. Saxler (a1), J. Xu (a1) and M. Razeghi (a1)...

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