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The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

J. Fan  and
J. Kakalios
J. Fan
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
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Abstract

The room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 789
Copyright
Copyright © Materials Research Society 1992

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References

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