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Spatial-Resolution Limits of Laser Patterning: Submicrometer Projection Microchemistry†

Published online by Cambridge University Press:  21 February 2011

D. J. Ehrlich  and
J. Y. Tsao
D. J. Ehrlich
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–0073
J. Y. Tsao
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–0073
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Abstract

The predictions of a simple two-dimensional model for the sensitivity to process contrast of direct-write and projection laser microchemistry are reviewed. Microchemical reactions excited by UV image projection are demonstrated using a 30X reduction reflecting system and excimer laser illumination. Well-resolved images with submicrometer features are obtained by: (1) reaction of an Al/O cermet, (2) projection doping of Si in BCl3,(3) projection etching of Pyrex glass in H2, and (4) reactive patterning of an organic bilayer. Linewidths of 0.5 – 0.2 μm have been demonstrated for projection imaging in these systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 195
Copyright
Copyright © Materials Research Society 1984

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Footnotes

†

This work was supported by the Department of the Air Force, in part under a specific program sponsored by the Air Force Office of Scientific Research, by the Defense Advanced Research Projects Agency, and by the Army Research Office.

References

REFERENCES

1. For recent reviews see, Ehrlich, D. J. and Tsao, J. Y., Laser Direct Writing for VLSI, in VLSI Electronics: Microstructure Science Vol. 7, Einspruch, N. G., ed., (Academic, New York, 1984) pp. 129–163;Google Scholar
1a Ehrlich, D. J. and Tsao, J. Y., J. Vac. Sci. Technol. (to be published Nov./Dec. 1983).Google Scholar
2. Jain, K., Willson, C. G. and Lin, B. J., IBM J. Res. Develop. 26, 151 (1982).Google Scholar
3. Hawryluk, A. M., Smith, H. I., Osgood, R. M. and Ehrlich, D. J., Optics Lett. 7, 402 (1982).CrossRefGoogle Scholar
4. Dubroeucq, G. M. and Zahorsky, D., Proc. Int. Conf. Microcircuit Engineering, Grenoble, France, 5–8 Oct. 1982, p. 73.Google Scholar
5. Jain, K., Lasers and Applications, Sept. 1983, pp. 49–56.Google Scholar
6. Nonreciprocal Laser Microchemical Processing: Spatial Resolution Limits and Demonstration of 0.2-μm Linewidths, Appl. Phys. Lett. (to be published Jan. 1984).Google Scholar
7. See, for example, King, M. C. in VLSI Electronics: Microstructure Science Vol. 1, Einspruch, N. G., ed. (Academic, New York, 1981), pp. 42–81.Google Scholar
8. See, for example, Bruning, J. H., J. Vac. Sci. Technol. 17, 1147 (1980).Google Scholar
9. Tsao, J. Y., Ehrlich, D. J., Bozler, C. O. and Hubbe, R. E., (to be published).Google Scholar
10. Deutsch, T. F., Fan, J. C. C., Turner, G. W., Chapman, R. L., Ehrlich, D. J. and Osgood, R. M. Jr., Appl. Phys. Lett. 38, 144 (1981).Google Scholar
11. Ibbs, K. G. and Lloyd, M. L., (this volume).Google Scholar
12. Srinivasan, R. and Mayne-Banton, V., Appl. Phys. Lett. 41, 576 (1982).CrossRefGoogle Scholar
13. Polasko, K. J., Ehrlich, D. J., Tsao, J. Y., Pease, R. F. W. and Marinero, E. E., Elect. Dev. Lett. (to be published).Google Scholar
14. Lin, B. J., Optical Methods for Fine Line Lithography, in Fine Line Lithography, Newman, R., ed., (North Holland, Amsterdam, 1980), pp. 105–233.Google Scholar
15. Efremow, N. N. Jr., private communication.Google Scholar