Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-24T16:01:16.712Z Has data issue: false hasContentIssue false

Spatially Resolved Photoluminescence in Spontaneously-ordered GaInP2

Published online by Cambridge University Press:  10 February 2011

S. Smith
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
J. M. Olson
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
L. L. Kazmerski
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Get access

Abstract

The low-temperature (5K) photoluminescence (PL) of partially-ordered GaInP2 is spatially resolved using high-resolution (from ˜ 0.2μm-0.7μm) scanning optical microscopy, revealing the spatial variation in band gap energy and the spatial origin of the ordering-induced low-energy emission and the associated ‘quantum-dot-like’ narrow spikes which appear when examining areas smaller, or of comparable size, than a single ordered domain. The large number of spectra taken within a micronsized area allow a detailed look at the statistical variation in band-gap energy and lineshape. A systematic study of a series of samples where the order parameter varies from η ˜ 0 to 0.45 shows that for the most highly-ordered samples, the statisitical distribution of excitonic energy and linewidth show evidence of exciton localization, which is also clearly seen by examining the spatial maps of the excitornic energy and linewidth extracted from the measured spectra.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Gomyo, A., Suzuki, T., and Iijima, S., Phys. Rev. Lett. 60, 2645 (1988).Google Scholar
2.Mascarenhas, A., Kurtz, S., Kibbler, A., and Olson, J.M., Phys. Rev. Lett. 63, 2108 (1989).Google Scholar
3.Cheong, H.M., Mascarenhas, A., Ahrenkiel, S.P., Jones, K.M., Geisz, J.F., and Olson, J.M., J. Appl. Phys. 83, 5418 (1998).Google Scholar
4.Betzig, E., Trautman, J.K., Harris, T.D., Weiner, J.S., Kostelak, R.L., Science 251, 1468 (1991)Google Scholar
5.Smith, S., Cheong, H.M., Fluegel, B.D., Geisz, J.F., Olsen, J.M., Kazmerski, L.O. and Mascarenhas, A., Appl. Phys Lett. 74, 706 (1999).Google Scholar
6.Zhang, Y., Smith, S., Geisz, J.F., Olsen, J.M., Mascarenhas, A., Phys. Rev. Lett. submitted (1999).Google Scholar
7.Cheong, H.M., Mascarenhas, A., Geisz, J.F., Olson, J.M., Keller, M.W. and Wendt, J.R., Phys. Rev. B, Rapid Comm. 57, R9400 (1998).Google Scholar
8.Kops, U., Ulbrich, R.G., Burkard, M., Geng, C., Sholz, F., and Schweizer, M., Phys. Stat. Sol. (a) 164, 459 (1997).Google Scholar
9.Kops, U., Blome, P.G., Spieker, E., Wenderoth, M., Ulbrich, R.G., Geng, C., and Scholz, F., presented at: 40th Electronic Materials Conference, 24-26 June, 1998, Charlottesville, VA.Google Scholar
10.Ernst, P., Geng, C., Hahn, G., Scholz, F., Schweizer, H., Phillup, F., and Mascarenhas, A., J. Appl. Phys. 79, 2633 (1996).Google Scholar