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S-Passivated InP Surfaces Prepared by (NH4)2S Treatments

Published online by Cambridge University Press:  25 February 2011

Y. Tao ,
A. Yelon ,
E. Sacher ,
Z.H. Lu  and
M.J. Graham
Y. Tao
Affiliation:
Group de Couches Minces and Dépt. de Génie Phys, Ecole Polytechnique de Montréal, C.P. 6079, Succursale “A”, Montréal, Québec, H3C 3A7, Canada
A. Yelon
Affiliation:
Group de Couches Minces and Dépt. de Génie Phys, Ecole Polytechnique de Montréal, C.P. 6079, Succursale “A”, Montréal, Québec, H3C 3A7, Canada
E. Sacher
Affiliation:
Group de Couches Minces and Dépt. de Génie Phys, Ecole Polytechnique de Montréal, C.P. 6079, Succursale “A”, Montréal, Québec, H3C 3A7, Canada
Z.H. Lu
Affiliation:
Institute for Microstructural Science, National Research Council of Canada, M12 Montreal Road, Ottawa, Ontario, KIA 0R9, Canada
M.J. Graham
Affiliation:
Institute for Microstructural Science, National Research Council of Canada, M12 Montreal Road, Ottawa, Ontario, KIA 0R9, Canada
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Abstract

S-terminated InP(100) surfaces which are chemically clean and stable were obtained by sulfide solution treatments. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) were used to investigate the thermal and chemical stability of the surfaces. Schottky diodes based on S-passivated InP(100) wafers were used as test devices tostudy the surface electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 293
Copyright
Copyright © Materials Research Society 1992

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References

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