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Space-Charge-Limited Currents in n-i-n Devices Incorporating Glow-Discharge and Hot-Wire Deposited a-Si:H

Published online by Cambridge University Press:  15 February 2011

Edith C. Molenbroek ,
C. H. M. Van Der Werf ,
K. F. Feenstra ,
F. Rubinelli  and
R. E. I. Schropp
Edith C. Molenbroek
Affiliation:
Debye Institute, Utrecht University, P.O.Box, 80.000, 3508 TA Utrecht, the Netherlands
C. H. M. Van Der Werf
Affiliation:
Debye Institute, Utrecht University, P.O.Box, 80.000, 3508 TA Utrecht, the Netherlands
K. F. Feenstra
Affiliation:
Debye Institute, Utrecht University, P.O.Box, 80.000, 3508 TA Utrecht, the Netherlands
F. Rubinelli
Affiliation:
INTEC, Guemes 3450, 3000 Santa Fe, Argentina
R. E. I. Schropp
Affiliation:
Debye Institute, Utrecht University, P.O.Box, 80.000, 3508 TA Utrecht, the Netherlands
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Abstract

Space-charge-limited currents have been examined in a wide variety of n-i-n devices. If the devices were completely symmetric, the current-voltage characteristics would be identical for positive and negative bias, but in several devices differences between the two polarities were observed. In order to understand in which part of the device these differences originate, the influence of the contacts and interfaces on the JV characteristics were examined by using different metal top contacts, different n-layers and different i-layers. Ag and Al top contacts gave minor differences between the polarities, whereas with Cr contacts no differences were observed. Incorporation of a defect layer in the i-layer results in asymmetric JV curves. We have observed a small asymmetry in an experimental device, and a large asymmetry using AMPS modeling. N-i-n devices appear to be a sensitive probe for interface defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 717
Copyright
Copyright © Materials Research Society 1997

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References

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