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Space Charge Profiles in Thick Amorphous Silicon Diodes

Published online by Cambridge University Press:  25 February 2011

Russell E. Hollingsworth ,
Jianping Xi  and
Roman Buitrago
Russell E. Hollingsworth
Affiliation:
Glasstech Solar, Inc., (GSI), 6800 Joyce Street, Golden, CO 80403
Roman Buitrago
Affiliation:
On leave of absence from CONICET, Argentina
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Abstract

Amorphous silicon p-i-n diodes with intrinsic layer thickness exceeding 50 microns have been produced. As a probe of the carrier collection, reverse bias collection efficiency measurements using weakly absorbed light were performed. The results have shown for the first time that amorphous silicon diodes of such thickness can be fully depleted. By analyzing the shape of the collection efficiency curve, profiles of the light induced space charge within the intrinsic layer are obtained. The space charge density in thick devices is found to vary strongly with position in the intrinsic layer as well as with excitation intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 323
Copyright
Copyright © Materials Research Society 1990

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References

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