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Space Charge Limited Current in A-Si:H Devices Using High Electric Fields

  • J. C. Van Den Heuvel (a1), R. C. Van Oort (a1), B. Bokhorst (a1) and M. J. Geerts (a1)

Abstract

Space Charge Limited Current (SCLC) measurements are used to obtain the density of gap states of intrinsic a-Si:H. If an electron is trapped by a positively charged defect, then the electron can be released by a high electric field which disturbs the SCLC measurement. A correction for this effect, which is called Poole-Frenkel emission, in SCLC measurements is derived and used to analyze current-voltage measurements performed on n-i-n a-Si:H devices. It is shown that the Poole-Frenkel emission is absent, and that this is in accordance with the contemporary models for the gap states in a-Si:H.

We also studied the characteristic temperature which is based on the concept that the distribution of gap states is exponential, and concluded that this distribution is not exponential.

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References

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8. Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon Press, Oxford, 1979), p. 211.

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Space Charge Limited Current in A-Si:H Devices Using High Electric Fields

  • J. C. Van Den Heuvel (a1), R. C. Van Oort (a1), B. Bokhorst (a1) and M. J. Geerts (a1)

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