Skip to main content Accessibility help

Some Properties of Ultra Thin Oxides Grown in Afterglow Oxygen Plasma

  • P. C. Chen (a1), J. Y. Lin (a2), Y. J. Hsu (a3) and H. L. Hwang (a1)


Microwave remote plasma oxidation were used to study the oxidation of Si and SiGe samples at a lower temperature. C–V measurements were performed to investigate the trap density, and the corresponding bonding structures of thin oxide were revealed by FTIR analysis. SIMS depth profiles were used to reveal the extent of the Ge segregation in SiGe samples. The system can grow ultra thin SiO2 with lower effective trap density. And Ge segregation can be largely suppressed by atomic oxygen oxidation at a lower temperature.



Hide All
[1] Ho, V.Q. and Sugano, T., IEEE Trans. Electron Dev., ED–27(8), 1436 (1980).
[2] LeGoues, F. K., Rosenberg, R., Nguyen, T. and Meyerson, B. S., Mat. Res. Soc. Symp. Proc., 105, 313 (1988).
[3] Ruzyllo, J., Hoff, A. and Ruggles, C., J. Electronic Mat., 16(5), 373, (1987).
[4] Yasuda, Y., Zaima, S., Kaida, T. and Koide, Y., Appl. Sur. Sci., 41/42, 429 (1989).
[5] Tsuji, M., Sakumoto, M. and Fujii, Y., Chem. Lett. 881 (1990).
[6] Lange, P., Schnakenberg, U., Ullerich, S. and Schliwinski, H.-J., J. Appl. Phys. 68(7), 3532 (1990).
[7] Boyd, I.W. and Wilson, J. I. B., Appl. Phys. Lett., 50(6) 320 (1987).
[8] Adamnchuk, V. K., Afanasev, V. V. and Akulov, A. V., Phys. Stat. Sol. (a), 122, 347 (1990).
[9] Frey, E. C., Parikh, N. R., Swanson, M. L., Numan, M. Z. and Chu, W. K., Mat. Res. Soc. Syrnp. Proc., 105, 277 (1988).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed