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Solubility of Impurities and Defect Impurity Interaction In II-VI Semiconductors

  • Y. Marfaing (a1)

Abstract

A description of incorporation and solubility limit of substitutional impurities is made using the alloy CdxHgloxTe as a model of analysis and a source of experimental data.

Then non-equilibrium incorporation of impurities under light excitation is considered. A model of photo assisted doping is presented which accounts for the high doping efficiency reported for the donor indium in photoassisted grown CdTe.

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Solubility of Impurities and Defect Impurity Interaction In II-VI Semiconductors

  • Y. Marfaing (a1)

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