Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T07:32:04.766Z Has data issue: false hasContentIssue false
  • English
  • Français

Solidification of Highly Undercooled Silicon: Bulk Nucleation and Amorphous Phase Formation

Published online by Cambridge University Press:  22 February 2011

R. F. Wood ,
D. H. Lowndes  and
J. Narayan
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37830
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37830
Get access

Abstract

Recent experimental and theoretical work suggests that bulk nucleation occurs in highly undercooled liquid silicon formed by the pulsed laser melting of amorphous layers. In this paper we discuss the dynamics of solidification of undercooled liquid silicon in terms of results from melting model calculations and from the theory of homogeneous bulk nucleation. The relationship between the occurrence of bulk nucleation and the ability to induce a liquid-to-amorphous phase transition by large undercoolings of the liquid is considered. It is concluded that the observed liquid-toamorphous transition in silicon cannot be explained by an equilibrium thermodynamic approach.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 141
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

REFERENCES

1.Liu, P. L., Yen, R., Bloembergen, N., and Hodgson, R. T., Appl. Phys. Lett. 34, 864 (1979).Google Scholar
2.Tsu, R., Hodgson, R. T., Tan, T. Y., and Baglin, J. E., Phys. Rev. Lett. 42, 1356 (1979).Google Scholar
3.Cullis, A. G., Weber, H. C., Chew, N. G., Poate, J. M., and Baeri, P., Phys. Rev. Lett. 49, 219 (1982).Google Scholar
4.Lowndes, D. H., Wood, R. F., and Narayan, J., Phys. Rev. Lett. (to be published).Google Scholar
5.Lowndes, D. H., Wood, R. F., Narayan, J., and White, C. W. (these Proceedings).Google Scholar
6.Narayan, J. and White, C. W., Appl. Phys. Lett. (to be published).Google Scholar
7.Donovan, E. P., Spaepen, F., Turnbull, D., Poate, J. M., and Jacobson, D. C., Appl. Phys. Lett. 42, 698 (1983).Google Scholar
8.Glassbrenner, C. J. and Slack, G. A., Phys. Rev. 134, A1058 (1964).Google Scholar
9.Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981).Google Scholar
10.Holloman, J. H. and Turnbull, D., Progr. Metal Phys. IV, 333 (1953).Google Scholar
11.Turnbull, D., J. Appl. Phys. 21, 1022 (1950).Google Scholar
12.Hsu, C. S. and Rahman, A., J. Chem. Phys. 70, 5234 (1979).Google Scholar
13.Wood, R. F., Mat. Res. Soc. Symp. Proc. 13, 83 (1983).Google Scholar