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Solid Solutions (PbI2)x – (BiI3)1-x

Published online by Cambridge University Press:  15 February 2011

Yu.N. Dmitriev ,
P.R. Bennett ,
L.J. Cirignano ,
T.K. Gupta ,
M. Klugerman  and
K.S. Shah
Yu.N. Dmitriev
Affiliation:
Radiation Monitoring Devices, Inc, Watertown, MA 02472, ydmitriyev@rmdinc.com
P.R. Bennett
Affiliation:
Radiation Monitoring Devices, Inc, Watertown, MA 02472
L.J. Cirignano
Affiliation:
Radiation Monitoring Devices, Inc, Watertown, MA 02472
T.K. Gupta
Affiliation:
Radiation Monitoring Devices, Inc, Watertown, MA 02472
M. Klugerman
Affiliation:
Radiation Monitoring Devices, Inc, Watertown, MA 02472
K.S. Shah
Affiliation:
Radiation Monitoring Devices, Inc, Watertown, MA 02472
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Abstract

System (PbI2)x – (BiI3)1-x of two layered semiconductors PbI2 and BiI3 with various composition were synthesized and grown both as bulk single crystals (by vertical Bridgman method) and films (by thermal vacuum deposition). Grown composites were tested by different techniques (X-ray difflaction analysis, optical transmission, I – V measurements, response to X-ray pulse excitation). Property versus composition showed nonlinear behavior of measured parameters. The structural model of ordered structures formation in this system, which was based upon local electrical neutrality of unit cells, was worked out. It has been experimentally demonstrated that a formation of ordered structures is possible within (PbI2)x-(BiI3)1-x system, which is consistent with the suggested model. The possibility of crystal structures formation as ordered sets of BiI3 and PbI2 layers was also checked.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 99
Copyright
Copyright © Materials Research Society 2000

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