Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-23T16:42:39.666Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature

Published online by Cambridge University Press:  26 February 2011

G. Lulli ,
P. G. Merli  and
M. Vittori Antisari
G. Lulli
Affiliation:
CNR - Istituto LAMEL, Via dé Castagnoli n.1 - 40126 Bologna, Italy
P. G. Merli
Affiliation:
CNR - Istituto LAMEL, Via dé Castagnoli n.1 - 40126 Bologna, Italy
M. Vittori Antisari
Affiliation:
ENEA - Divisone Scienza dei Materiali, CRE Casaccia, CP 2400 00100 Roma, Italy
Get access

Abstract

Solid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the faste

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 375
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Gerasimenko, N.N., Dvurechenskii, A.V., Kachurin, G.A., Pridachin, N.B. and Smirnov, L.S., Sov.Phys.-Semicond. 6, 1588 (1973)Google Scholar
2 Linnros, J., Svensson, B. and Holm~n, G., Phys.Rev.B 30, 3629 (1984)Google Scholar
3 Elliman, R.G., Johnson, S.T., Pogany, A.P. and Williams, J.S., Nucl.lnstrum. Method B 7/8, 310 (1985).CrossRefGoogle Scholar
4 Cembali, G.F., Merli, P.G. and Zignani, F., Appl.Phys.Lett. 38, 808 (1981)Google Scholar
5 Berti, M., Drigo, A.V., Lulli, G., Merli, P.G. and Antisari, N.Vittori, phys. stat.sol.(a) 94, 85 (1986)Google Scholar
6 Berti, M., -Drigo, A.V., Lulli, G., Merli, P.G. and Antisari, M.Vittori, phys. stat.sol.(a) 97, 77 (1986)Google Scholar
7 Linnros, J. and Holmèn, G., J.Appl.Phys. 59, 1513 (1986)Google Scholar
8 Williams, J.S., Elliman, R.G., Brown, W.L. and Seidel, T.E., Phys.Rev.Lett. 55, 1482 (1985)Google Scholar
9 Lulli, G., Merli, P.G. and Antisari, M.Vittori, Phys.Rev.B., (1987) in pressGoogle Scholar
10 Kendall, D.L. and DeVries, D.B. in “Semiconductor Silicon 1969” ed. by Haberecht, R.R. and Kern, E.L. (Electrochemical Society, New York 1970), p.358 Google Scholar
11 Watkins, G.D., J.Phys.Soc.Japan 18, 22 (1963)Google Scholar
12 Csepregi, L., Kennedy, E.F., Gallagher, T.J. and Mayer, J.W., J.Appl.Phys. 48, 4234 (1977)CrossRefGoogle Scholar