Solid phase epitaxy was studied in the GexSi1-x/ Si system in the composition range of 4% to 10% Ge. For strained samples regrowth rates decreased with increasing Ge concentrations, with an activation energy of 2.8 and 3.0 eV for the Ge4Si96 and Ge8Si92 alloys respectively. In contrast, the rates of the strain-relaxed samples increased compared with that of pure Si. The minimum yield of fully regrown samples with Ge concentrations lower than 8% recovered to that of the as-deposited samples. However, the minimum yield of a 3500 Å-thick Ge10Si90 alloy increased to 12 % after recrystallization.