Tetramethyl ammonium silicate (TMAS) is known as a structuring agent in zeolite synthesis. We report its first use to prepare porous silica films for low k dielectric applications in microelectronics. A solution of TMAS 18.7 wt. % was spin coated on silicon substrates with a 3000 Å thick thermal oxide. The spin coated films were subsequently heat-treated at 450°C to obtain porous silica. The use of TMAS solution without gelation led to films of only moderate porosity value of 10%. The addition of methyl lactate, a gelling agent, significantly increased film porosity and improved the pore size distribution. For example, 50% porosity and uniform pore size distribution (average pore size ∼ 40 Å) has been achieved. Dielectric constants (k) of our porous films are as low as 2.5.