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Solar Grade CuInS2 Thin Films Grown at 250°C

Published online by Cambridge University Press:  31 January 2011

Thomas Painchaud ,
Nicolas Barreau  and
John Kessler
Thomas Painchaud
Affiliation:
thomas.painchaud@cnrs-imn.fr, IMN-UMR6502, CESES, Nantes, France
Nicolas Barreau
Affiliation:
nicolas.barreau@univ-nantes.fr, IMN-UMR6502, CESES, Nantes, France
John Kessler
Affiliation:
john.kessler@univ-nantes.fr, IMN-UMR6502, CESES, Nantes, France
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Abstract

CuInS2 (chalcopyrite structure) thin films were synthesized at 250°C using a two-stage process consisting firstly in the co-evaporation of a large grain In2S3 (defect spinel structure) precursor layer followed by the addition of copper and sulfur. The crystalline properties of the resulting films are similar to those leading to high efficiency solar cells. An energy conversion efficiency of 6.7% has been attained with a 1.5 μm thick CuInS2 layer and a standard CdS buffer layer/ZnO window structure. Improved performances can be expected through the growth of thicker absorbers.

Keywords

physical vapor deposition (PVD)photovoltaicstructural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M08-22
Copyright
Copyright © Materials Research Society 2009

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